STD8NM60N Datasheet, PDF (4/17 Pages) STMicroelectronics – N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET

Electrical characteristics
STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N
2
Electrical characteristics
(T_CASE=25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
dv/dt^{(1) Drain-source voltage slope}
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
I_D = 1 mA, V_GS = 0
V_DD = 480 V, I_D = 7 A,
V_GS =10 V
V_DS = Max rating,
V_DS = Max rating,Tc = 125 °C
V_GS = ±20 V
V_DS = V_GS, I_D = 250 µA
V_GS = 10V, I_D = 3.5 A
600
V
38
V/ns
1 µA
100 µA
±100 nA
2 3 4V
0.56 0.65 Ω
1. Characteristics value at turn off on inductive load
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs(1) Forward transconductance ^V_DS ^{= 15 V, I}_D^{= 3.5 A}
15
S
C_iss ^{Input capacitance}
560
pF
C_oss ^{Output capacitance}
V_DS = 50 V, f = 1 MHz, V_GS = 0
37
pF
Reverse transfer
C_{rss capacitance}
2
pF
C_oss
(2)
eq.
Equivalent output
capacitance
V_GS = 0, V_DS = 0 to 480 V
153
pF
f = 1 MHz Gate DC Bias = 0
R_G Gate input resistance
Test Signal Level = 20 mV
6
Ω
Open Drain
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 480 V, I_D = 7 A
V_GS = 10 V
(see Figure 19)
19
nC
3
nC
10
nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. C_{oss eq}. is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS
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