STD60N3LH5 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 30 V, 0.0072 Ω, 48 A - DPAK - IPAK STripFET™ V Power MOSFET

STD60N3LH5 - STU60N3LH5
Electrical characteristics
Table 6. Switching on/off (resistive load)
Symbol
Parameter
Test conditions
t_d(on)
t_r
Turn-on delay time
Rise time
V_DD=10V, I_D= 24A,
R_G=4.7Ω, V_GS= 10V
(Figure 13 and
Figure 18)
t_d(off)
t_f
Turn-off delay time
Fall time
V_DD=10V, I_D= 24A,
R_G=4.7Ω, V_GS= 10V
(Figure 13 and
Figure 18)
Min. Typ. Max. Unit
6
ns
33
ns
19
ns
4.2
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM
Source-drain current
Source-drain current (pulsed)⁽¹⁾
V_SD Forward on voltage
I_SD=24A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=48A, di/dt =100A/µs,
V_DD=20V, Tj = 25°C
(Figure 15)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
48 A
192 A
1.1 V
25
ns
18.5
nC
1.5
A
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