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STD60N3LH5 Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 30 V, 0.0072 Ω, 48 A - DPAK - IPAK STripFET™ V Power MOSFET
STD60N3LH5
STU60N3LH5
N-channel 30 V, 0.0072 Ω, 48 A - DPAK - IPAK
STripFET™ V Power MOSFET
Features
Type
STD60N3LH5
STU60N3LH5
VDSS RDS(on) Max
ID
30V
0.008Ω
48A
30V
0.0084Ω
48A
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Description
This product utilizes the 5th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available RDS(on)*Qg, in the standard
packages, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
3
1
DPAK
3
2
1
IPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD60N3LH5
STU60N3LH5
Marking
60N3LH5
60N3LH5
Package
DPAK
IPAK
Packaging
Tape and reel
Tube
September 2008
Rev 2
1/15
www.st.com
15