STD60N3LH5 Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 30 V, 0.0072 Ω, 48 A - DPAK - IPAK STripFET™ V Power MOSFET

STD60N3LH5 - STU60N3LH5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source voltage (V_GS=0)
V_DS Drain-source voltage (V_GS = 0) @ T_JMAX
V_GS Gate-Source voltage
I_D ^{(1) Drain current (continuous) at T}_C ^{= 25°C}
I_D
Drain current (continuous) at T_C = 100°C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25°C
Derating factor
E_AS ⁽³⁾ Single pulse avalanche energy
T_j
Operating junction temperature
T_stg Storage temperature
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25°C, Id = 24A, Vdd = 12V
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case
Rthj-amb
T_j
Thermal resistance junction-case max
Thermal resistance junction-case max
Maximum lead temperature for soldering purpose
Value
30
35
± 22
48
42.8
192
60
0.4
160
-55 to 175
Value
2.5
100
275
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
Unit
°C/W
°C/W
°C
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