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| STD60N3LH5 Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 30 V, 0.0072 Ω, 48 A - DPAK - IPAK STripFET™ V Power MOSFET | |||
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Electrical characteristics
2
Electrical characteristics
STD60N3LH5 - STU60N3LH5
(TCASE = 25°C unless otherwise specified)
Table 4. Static
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
Voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
ID = 250µA, VGS= 0
VDS = 30V
VDS = 30V,Tc = 125°C
VGS = ± 22V
VDS= VGS, ID = 250µA
VGS= 10V, ID= 24A
SMD version
VGS= 10V, ID= 24A
VGS= 5V, ID= 24A
SMD version
VGS= 5V, ID= 24A
Min. Typ. Max. Unit
30
V
1 µA
10 µA
±100 nA
1
V
0.0072 0.008 â¦
0.0076 0.0084 â¦
0.0088 0.011 â¦
0.0092 0.0114 â¦
Table 5. Dynamic
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Qgs1
Qgs2
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre Vth gate-to-source
charge
Post Vth gate-to-source
charge
RG Gate input resistance
Test conditions
VDS =25V, f=1MHz,
VGS=0
VDD=15V, ID = 48A
VGS =5V
(Figure 14)
VDD=15V, ID = 48A
VGS =5V
(Figure 19)
f=1MHz gate bias
Bias= 0 test signal
level=20mV
open drain
Min Typ. Max. Unit
1350
pF
265
pF
32
pF
8.8
nC
4.7
nC
2.2
nC
2.2
nC
2.5
nC
1.1
â¦
4/15
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