STD5N60M2 Datasheet, PDF (5/22 Pages) STMicroelectronics – Extremely low gate charge

STD5N60M2, STP5N60M2, STU5N60M2
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM ⁽¹⁾
VSD ⁽²⁾
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
VGS = 0 V, ISD = 3.5 A
ISD = 3.5 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 18: "Test circuit for
inductive load switching and
diode recovery times")
-
3.5 A
-
14 A
-
1.6 V
- 220
ns
- 1.05
µC
- 9.5
A
trr
Reverse recovery time _{ISD = 3.5 A, di/dt = 100 A/µs,}
- 314
ns
Qrr
Reverse recovery
charge
VDD = 60 V, Tj = 150 °C
(see Figure 18: "Test circuit for
- 1.5
µC
IRRM
Reverse recovery
current
inductive load switching and
diode recovery times")
- 9.5
A
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{Pulse test: pulse duration = 300 µs, duty cycle 1.5 %.}
DocID025318 Rev 4
5/22