STD5N60M2 Datasheet, PDF (4/22 Pages) STMicroelectronics – Extremely low gate charge

Electrical characteristics
STD5N60M2, STP5N60M2, STU5N60M2
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage drain
current
IGSS
Gate-body leakage
current
VGS = 0 V, VDS = 600 V
VGS = 0 V, VDS = 600 V,
TC = 125 °C ⁽¹⁾
VDS = 0 V, VGS = ±25 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source
on-resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 1.7 A
Min. Typ. Max. Unit
600
V
1
µA
100
±10 µA
2
3
4
V
1.3 1.4 Ω
Notes:
(1)_{Defined by design, not subject to production test.}
Symbol
Ciss
Coss
Crss
Coss eq.⁽¹⁾
RG
Qg
Qgs
Qgd
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
Table 6: Dynamic
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0 V
VDS = 0 to 480 V, VGS = 0 V
f = 1 MHz open drain
VDD = 480 V, ID = 3.5 A,
VGS = 10 V (see Figure 17:
"Test circuit for gate charge
behavior")
Min. Typ. Max. Unit
- 211 -
-
13
-
pF
- 0.75 -
- 19.5 - pF
- 6.2 -
Ω
-
8
-
- 1.6 - nC
- 4.4 -
Notes:
(1) _{Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS.
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off delay time
tf
Fall time
Table 7: Switching times
Test conditions
VDD = 300 V, ID = 1.7 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 16: "Test circuit for
resistive load switching times"
and Figure 21: "Switching time
waveform")
Min. Typ. Max. Unit
-
12
-
-
3
-
-
70
-
ns
-
15
-
4/22
DocID025318 Rev 4