STD5N60M2 Datasheet, PDF (3/22 Pages) STMicroelectronics – Extremely low gate charge

STD5N60M2, STP5N60M2, STU5N60M2
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VGS
ID
IDM ⁽¹⁾
PTOT
dv/dt ⁽²⁾
dv/dt ⁽³⁾
Tstg
Tj
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
±25
3.5
2.2
14
45
15
50
-55 to 150
V
A
A
W
V/ns
°C
Notes:
(1) _{Pulse width limited by safe operating area.}
(2) _{ISD ≤ 3.5 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.}
(3) _{VDS ≤ 480 V.}
Symbol
Rthj-case
Rthj-pcb
Rthj-amb
Table 3: Thermal data
Parameter
Thermal resistance junction-case max.
Thermal resistance junction-pcb max. ⁽¹⁾
Thermal resistance junction-ambient max.
DPAK
50
Value
TO-220
2.8
62.5
IPAK
100
Unit
°C/W
Notes:
(1) _{When mounted on 1 inch² FR-4, 2 Oz copper board.}
Symbol
IAR
EAS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR; VDD = 50 V)
Value Unit
0.5 A
80 mJ
DocID025318 Rev 4
3/22