STD5N60M2 Datasheet, PDF (1/22 Pages) STMicroelectronics – Extremely low gate charge

STD5N60M2, STP5N60M2,
STU5N60M2
N-channel 600 V, 1.3 Ω typ., 3.5 A MDmesh™ M2
Power MOSFET in DPAK, TO-220 and IPAK packages
Datasheet - production data
Features
Order code
STD5N60M2
STP5N60M2
STU5N60M2
VDS@ TJmax
650 V
RDS(on) max.
1.4 Ω
ID
3.5 A
Figure 1: Internal schematic diagram
 Extremely low gate charge
 Excellent output capacitance (COSS) profile
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, these devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.
Order code
STD5N60M2
STP5N60M2
STU5N60M2
Table 1: Device summary
Marking
Package
DPAK
5N60M2
TO-220
IPAK
Packing
Tape and reel
Tube
June 2016
DocID025318 Rev 4
This is information on a product in full production.
1/22
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