STD4LNK60Z Datasheet, PDF (5/11 Pages) STMicroelectronics – N-channel 600 V, 2.2 Ω, 3.3 A, TO-220FP, DPAK Zener-protected SuperMESH™ Power MOSFET

STD4LNK60Z - STF4LNK60Z
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM(1)
Source-drain current
Source-drain current
(pulsed)
V_SD(2) Forward on voltage
I_SD= 3.3 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD= 3.3 A, di/dt = 100 A/µs,
V_DD=480 V, Tj=150°C
(see Figure 7)
1. Pulse width limited by package
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
3.3 A
13.2 A
TBD V
TBD
ns
TBD
nC
TBD
A
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