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STD4LNK60Z Datasheet, PDF (1/11 Pages) STMicroelectronics – N-channel 600 V, 2.2 Ω, 3.3 A, TO-220FP, DPAK Zener-protected SuperMESH™ Power MOSFET
Features
STD4LNK60Z
STF4LNK60Z
N-channel 600 V, 2.2 Ω, 3.3 A, TO-220FP, DPAK
Zener-protected SuperMESH™ Power MOSFET
Preliminary Data
Type
VDSS
RDS(on)
max
ID
STD4LNK60Z 600 V
STF4LNK60Z 600 V
< 2.7 Ω 3.3 A
< 2.7 Ω 3.3 A
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Improved ESD capability
Pw
70 W
25 W
Application
■ Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST’s full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
3
2
1
TO-220FP
3
1
DPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD4LNK60Z
STF4LNK60Z
Marking
4LNK60Z
4LNK60Z
Package
DPAK
TO-220FP
Packaging
Tape and reel
Tube
July 2008
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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www.st.com
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