STD4LNK60Z Datasheet, PDF (3/11 Pages) STMicroelectronics – N-channel 600 V, 2.2 Ω, 3.3 A, TO-220FP, DPAK Zener-protected SuperMESH™ Power MOSFET

STD4LNK60Z - STF4LNK60Z
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage (V_GS = 0)
V_GS
Gate-source voltage
I_D
Drain current (continuous) at T_C = 25 °C
I_D
Drain current (continuous) at T_C = 100 °C
I_DM
Drain current (pulsed)
P_TOT ^{Total dissipation at T}_C ^{= 25 °C}
Derating factor
V_ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T_C=25 °C)
T_j
Operating junction temperature
T_stg
Storage temperature
1. Limited by package
Value
TO-220FP
DPAK
600
± 30
3.3 ⁽¹⁾
2 ⁽¹⁾
13.2⁽¹⁾
3.3
2
13.2
25
70
0.2
0.56
2500
--
-55 to 150
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case
R_{thj-pcb Thermal resistance junction-pcb}⁽¹⁾
R_thj-amb Thermal resistance junction-amb
T_l
Maximum lead temperature for soldering
purpose
1. Minimum footprint
Value
TO-220FP
DPAK
5
1.79
--
50
62.5
--
300
Table 4. Avalanche characteristics
Symbol
Parameter
I_AR
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)
E_AS
Single pulse avalanche energy ⁽¹⁾
1. Starting Tj = 25 °C, I_D = I_AR, V_DD = 50 V
Value
TBD
TBD
Unit
V
V
A
A
A
W
W/°C
V
°C
Unit
°C/W
°C/W
°C/W
°C
Unit
A
mJ
3/11