STD4LNK60Z Datasheet, PDF (4/11 Pages) STMicroelectronics – N-channel 600 V, 2.2 Ω, 3.3 A, TO-220FP, DPAK Zener-protected SuperMESH™ Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD4LNK60Z - STF4LNK60Z
(T_CASE=25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
V_(BR)DSS
Drain-source breakdown
voltage
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS(th) Gate threshold voltage
R_DS(on)
Static drain-source on
resistance
Test conditions
Min. Typ.
I_D = 1 mA, V_GS= 0
600
V_DS = Max rating,
V_DS = Max rating,Tc=125 °C
V_GS = ± 30 V
V_DS= V_GS, I_D = 50 µA
V_GS= 10 V, I_D= 2.7 A
2
3
2.2
Max. Unit
V
1 µA
50 µA
±100 nA
4
V
2.7 Ω
Table 6.
Symbol
Dynamic
Parameter
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
C_{oss eq.}
Equivalent output
capacitance
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
Test conditions
Min. Typ. Max. Unit
400
pF
V_DS =25 V, f=1 MHz, V_GS=0
50
pF
10
pF
V_DS = 0 to 480 V, V_GS =0
V_DD= 480 V, I_D = 3.3 A
V_GS = 10 V
(see Figure 3)
44.4
pF
14
nC
TBD
nC
TBD
nC
Table 7.
Symbol
Switching times
Parameter
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off delay time
Fall time
Test conditions
V_DD= 300 V, I_D= 3.3 A,
R_G=4.7 Ω, V_GS=10 V
(see Figure 2)
V_DD=300 V, I_D= 3.3 A,
R_G=4.7 Ω, V_GS= 10 V
(see Figure 2)
Min. Typ. Max. Unit
7.5
ns
19.5
ns
28
ns
24
ns
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