STD26P3LLH6 Datasheet, PDF (5/16 Pages) STMicroelectronics – Low gate input resistance

STD26P3LLH6
Electrical characteristics
Symbol
Table 7. Switching on/off (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
- 15
V_DD = 24 V, I_D = 1.5 A,
- 15
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 13)
- 24
- 21
- ns
- ns
- ns
- ns
Note:
Symbol
Table 8. Source drain diode
Parameter
Test conditions
I_SD
(1)
I_SDM
(2)
V_SD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
t_rr Reverse recovery time
Q_rr Reverse recovery charge
I_RRM Reverse recovery current
I_SD = 12 A, V_GS = 0
I_SD = 12 A,
di/dt = 100 A/μs,
V_DD = 16 V
(see Figure 15)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Min. Typ. Max. Unit
-
12 A
-
48 A
-
1.1 V
- 15
ns
- 6.5
nC
- 0.9
A
For the P-channel Power MOSFETs the actual polarity of the voltages and the current must
be reversed.
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