STD26P3LLH6 Datasheet, PDF (1/16 Pages) STMicroelectronics – Low gate input resistance

STD26P3LLH6
P-channel 30 V, 0.024 Ω typ., 12 A, STripFET™ VI DeepGATE™
Power MOSFET in a DPAK package
Datasheet - production data
Features
TAB
23
1
DPAK
Figure 1. Internal schematic diagram
D(2 or TAB)
G(1)
Order code
V_DSS
R_DS(on)
max
I_D
STD26P3LLH6 30 V 0.030 Ω⁽¹⁾ 12 A
1. @ V_GS= 10 V
• R_DS(on) * Q_g industry benchmark
• Extremely low on-resistance R_DS(on)
• High avalanche ruggedness
• Low gate input resistance
P_TOT
40 W
Applications
• Switching applications
• LCC converters, resonant converters
Description
This device is a P-channel Power MOSFET
th
developed using the 6 generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages
S(3)
AM11258v1
Order code
STD26P3LLH6
Table 1. Device summary
Marking
Package
26P3LLH6
DPAK
Packaging
Tape and reel
Note:
For the P-channel Power MOSFETs the actual polarity of the voltages and the current must
be reversed.
February 2014
This is information on a product in full production.
DocID023574 Rev 5
1/16
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