STD26P3LLH6 Datasheet, PDF (3/16 Pages) STMicroelectronics – Low gate input resistance

STD26P3LLH6
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
V_DS Drain-source voltage
V_GS
(1)
I_D
(1)
I_D
(1)(2)
I_DM
(1)
P_TOT
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
T_stg Storage temperature
T_j Max. operating junction temperature
1. Limited by wire bonding.
2. Pulse width limited by safe operating area.
30
±20
12
8.5
48
40
-55 to 175
175
Unit
V
V
A
A
A
W
°C
°C
Symbol
Table 3. Thermal data
Parameter
R_thj-case Thermal resistance junction-case max
Value
3.75
Unit
°C/W
Note:
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Unit
Single pulse avalanche energy
E_AS (starting T_J=25 °C, I_D=6 A, I_AS=12 A, V_DD=25 V,
350
mJ
V_gs=10 V)
For the P-channel Power MOSFETs the actual polarity of the voltages and the current must
be reversed.
DocID023574 Rev 5
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