STD19N3LLH6AG Datasheet, PDF (5/15 Pages) STMicroelectronics – High avalanche ruggedness

STD19N3LLH6AG
Electrical characteristics
Symbol
ISD
ISDM⁽¹⁾
VSD⁽²⁾
trr
Qrr
IRRM
Parameter
Table 8: Source-drain diode
Test conditions
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
VGS = 0 V, ISD = 10 A
ISD = 10 A, di/dt = 100 A/µs,
VDD = 24 V (see Figure 15:
"Test circuit for inductive load
switching and diode recovery
times")
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{Pulse test: pulse duration = 300 µs, duty cycle 1.5%.}
Min. Typ. Max. Unit
-
10 A
-
40 A
-
1.12 V
- 15.1
ns
- 7.5
nC
-
1
A
DocID028432 Rev 2
5/15