STD19N3LLH6AG Datasheet, PDF (1/15 Pages) STMicroelectronics – High avalanche ruggedness

STD19N3LLH6AG
Automotive-grade N-channel 30 V, 25 mΩ typ., 10 A
STripFET™ H6 Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
STD19N3LLH6AG 30 V
RDS(on)
max.
33 mΩ
ID
PTOT
10 A 30 W
 Designed for automotive applications and
AEC-Q101 qualified
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
 Logic level
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ H6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Order code
STD19N3LLH6AG
Table 1: Device summary
Marking
Package
19N3LLH6
DPAK
Packing
Tape and reel
October 2015
DocID028432 Rev 2
This is information on a product in full production.
1/15
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