STD19N3LLH6AG Datasheet, PDF (3/15 Pages) STMicroelectronics – High avalanche ruggedness

STD19N3LLH6AG
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
ID
IDM⁽²⁾
PTOT
Tstg
Tj
Drain-source voltage
Gate-source voltage
Drain current (continuous) at Tcase = 25 °C⁽¹⁾
Drain current (continuous) at Tcase = 100 °C
Drain current (pulsed)
Total dissipation at Tcase = 25 °C
Storage temperature
Operating junction temperature
30
V
±20
V
10
A
10
40
A
30
W
-55 to 175
°C
Notes:
(1) _{Current limited by package. At Tcase = 25 °C the silicon is able to sustain 22 A.}
(2) _{Pulse width limited by safe operating area.}
Symbol
Rthj-case
Rthj-pcb⁽¹⁾
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
Notes:
(1)_{When mounted on a 1-inch² FR-4, 2 Oz copper board.}
Value
5
50
Unit
°C/W
Symbol
IAV⁽¹⁾
EAS⁽²⁾
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Notes:
(1) _{Pulse width limited by Tjmax.}
(2) _{starting Tj = 25 °C, ID = IAV, VDD = 25 V.}
Value
10
130
Unit
A
mJ
DocID028432 Rev 2
3/15