STD19N3LLH6AG Datasheet, PDF (4/15 Pages) STMicroelectronics – High avalanche ruggedness

Electrical characteristics
STD19N3LLH6AG
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
VGS = 0 V, ID = 250 µA
VGS = 0 V, VDS = 30 V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 30 V,
Tcase = 125 °C
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±20 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on-
resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5 A
VGS = 4.5 V, ID = 5 A
Min. Typ. Max. Unit
30
V
1 µA
100 µA
±100 nA
1
2.5 V
25 33
mΩ
33 50
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 6: Dynamic
Test conditions
VDS = 25 V, f = 1 MHz,
VGS = 0 V
VDD = 15 V, ID = 10 A,
VGS = 4.5 V (see Figure 14:
"Test circuit for gate charge
behavior")
Min. Typ. Max. Unit
- 321 -
-
68
-
pF
-
34
-
- 3.7 -
-
1
- _nC
- 1.7 -
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7: Switching times
Test conditions
VDD = 15 V, ID = 5 A
RG = 4.7 Ω, VGS = 10 V (see
Figure 13: "Test circuit for
resistive load switching times"
and Figure 18: "Switching time
waveform")
Min.
Typ.
Max.
Uni
t
- 2.4 -
- 2.5 -
- 12.8 -
ns
- 2.5 -
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