STD16N60M2 Datasheet, PDF (5/16 Pages) STMicroelectronics – Extremely low gate charge

STD16N60M2
Symbol
Parameter
Table 8: Source drain diode
Test conditions
ISD
ISDM⁽¹⁾
VSD⁽²⁾
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 12 A
ISD = 12 A,
di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive
load switching and diode
recovery times")
trr
Reverse recovery time
ISD = 12 A,
Qrr
Reverse recovery charge
di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 16: "Test
IRRM
Reverse recovery current ^{circuit for inductive load}
switching and diode
recovery times")
Electrical characteristics
Min.
-
-
-
-
-
Typ.
316
3.25
Max. Unit
12 A
48 A
1.6 V
ns
µC
-
20.5
A
-
454
ns
-
4.8
µC
-
21
A
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{Pulse test: pulse duration = 300 µs, duty cycle 1.5%.}
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