STD16N60M2 Datasheet, PDF (3/16 Pages) STMicroelectronics – Extremely low gate charge

STD16N60M2
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VGS
ID
ID
IDM⁽¹⁾
PTOT
dv/dt⁽²⁾
dv/dt⁽³⁾
Tstg
Tj
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC= 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature
Max. operating junction temperature
± 25
12
7.6
48
110
15
50
- 55 to 150
150
V
A
A
A
W
V/ns
V/ns
°C
Notes:
(1) _{Pulse width limited by safe operating area.}
(2) _{ISD ≤ 12 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS.}
(3) _{VDS ≤ 480 V.}
Symbol
Rthj-case
Rthj-pcb⁽¹⁾
Table 3: Thermal data
Parameter
Thermal resistance junction-case max.
Thermal resistance junction-pcb max.
Notes:
(1) _{When mounted on a 1-inch² FR-4, 2 oz Cu board}
Value
1.14
50
Unit
°C/W
°C/W
Symbol
IAR
EAS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax)
Single pulse avalanche energy (starting
Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
2.9
130
Unit
A
mJ
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