STD16N60M2 Datasheet, PDF (4/16 Pages) STMicroelectronics – Extremely low gate charge

Electrical characteristics
STD16N60M2
2
Electrical characteristics
(T_C = 25 °C unless otherwise specified).
Table 5: Static
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Drain-source breakdown
voltage
Zero gate voltage drain
current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-
resistance
VGS = 0 V, ID = 1 mA
VGS = 0 V, VDS = 600 V
VGS = 0 V, VDS = 600 V,
TC = 125 °C
VDS = 0 V, VGS = ±25 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 6 A
600
V
1 µA
100 µA
±10 µA
2
3
4
V
0.280 0.320 Ω
Symbol
Parameter
Ciss Input capacitance
Coss Output capacitance
Crss
Reverse transfer
capacitance
Coss
(1)
eq.
Equivalent output
capacitance
RG Intrinsic gate resistance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Table 6: Dynamic
Test conditions
VDS= 100 V, f = 1 MHz,
VGS = 0 V
VDS = 0 V to 480 V,
VGS = 0 V
f = 1 MHz open drain
VDD = 480 V, ID = 12 A,
VGS = 10 V (see Figure 15:
"Gate charge test circuit")
Min.
-
-
-
-
-
-
-
-
Typ.
700
38
Max. Unit
-
pF
-
pF
1.2
-
pF
140
-
pF
5.3
-
Ω
19
-
nC
3.3
-
nC
9.5
-
nC
Notes:
(1) _{Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS.
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off delay time
tf
Fall time
Table 7: Switching times
Test conditions
VDD = 300 V, ID = 6 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 14: "Switching
times test circuit for
resistive load" and Figure
19: "Switching time
waveform")
Min.
-
-
-
Typ.
10.5
9.5
58
Max. Unit
-
ns
-
ns
-
ns
-
18.5
-
ns
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DocID027191 Rev 2