STD16N60M2 Datasheet, PDF (1/16 Pages) STMicroelectronics – Extremely low gate charge

STD16N60M2
N-channel 600 V, 0.280 Ω typ., 12 A MDmesh™ M2
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STD16N60M2
VDS
600 V
RDS(on) max.
0.320 Ω
ID
12 A
• Extremely low gate charge
• Excellent output capacitance (C_OSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STD16N60M2
S(3)
AM15572v1_tab
Table 1: Device summary
Marking
Package
16N60M2
DPAK
Packing
Tape and reel
March 2015
DocID027191 Rev 2
This is information on a product in full production.
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