STD12N50DM2 Datasheet, PDF (5/16 Pages) STMicroelectronics – Fast-recovery body diode

STD12N50DM2
Electrical characteristics
Symbol
ISD
ISDM⁽¹⁾
VSD ⁽²⁾
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Table 8: Source drain diode
Test conditions
Source-drain
current
Source-drain
current (pulsed)
Forward on voltage
Reverse recovery
time
Reverse recovery
charge
Reverse recovery
current
VGS = 0 V, ISD = 11 A
ISD = 11 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
Reverse recovery
time
Reverse recovery
charge
Reverse recovery
current
ISD = 11 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
Notes:
(1)_{Pulse width is limited by safe operating area}
(2)_{Pulse test: pulse duration = 300 µs, duty cycle 1.5%}
Min. Typ. Max. Unit
-
11 A
-
44 A
-
1.6 V
- 140
ns
- 0.707
µC
- 10.1
A
- 190
ns
- 1.111
µC
- 11.7
A
DocID026806 Rev 2
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