STD12N50DM2 Datasheet, PDF (4/16 Pages) STMicroelectronics – Fast-recovery body diode

Electrical characteristics
STD12N50DM2
2
4/16
Electrical characteristics
(TC = 25 °C unless otherwise specified).
Table 5: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
VGS = 0 V, ID = 1 mA
VGS = 0 V, VDS = 500 V
IDSS
Zero gate voltage
drain current
VGS = 0 V, VDS = 500 V,
TC = 125 °C⁽¹⁾
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold
voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 5.5 A
Notes:
(1)_{Defined by design, not subject to production test.}
Min. Typ. Max. Unit
500
V
1 µA
100 µA
±10 µA
3
4
5
V
0.299 0.350 Ω
Symbol
Ciss
Coss
Crss
Coss eq.⁽¹⁾
RG
Qg
Qgs
Qgd
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Table 6: Dynamic
Test conditions
VDS= 100 V, f = 1 MHz,
VGS = 0 V
VDS = 0 V to 400 V, VGS = 0 V
f = 1 MHz open drain
VDD = 400 V, ID = 11 A,
VGS = 10 V (see Figure 15: "Test
circuit for gate charge behavior")
Min. Typ. Max. Unit
- 628 - pF
-
38
-
pF
- 1.2 - pF
-
69
-
pF
-
7
-
Ω
-
16
-
nC
- 4.6 - nC
-
7
- nC
Notes:
(1) _{Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Table 7: Switching times
Test conditions
VDD = 250 V, ID = 5.5 A
RG = 4.7 Ω, VGS = 10 V (see
Figure 14: "Test circuit for
resistive load switching times"
and Figure 19: "Switching time
waveform")
DocID026806 Rev 2
Min. Typ. Max. Unit
- 12.5 -
ns
-
9
-
ns
-
28
-
ns
- 9.8
-
ns