STD12N50DM2 Datasheet, PDF (3/16 Pages) STMicroelectronics – Fast-recovery body diode

STD12N50DM2
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VGS
ID
ID
IDM⁽¹⁾
PTOT
dv/dt⁽²⁾
dv/dt⁽³⁾
Tstg
Tj
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC= 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
Notes:
(1)_{Pulse width limited by safe operating area.}
(2) _{ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS}
(3) _{VDS ≤ 400 V}
Symbol
Rthj-case
Rthj-pcb⁽¹⁾
Table 3: Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Notes:
(1)_{When mounted on a 1-inch² FR-4, 2 oz Cu board}
Symbol
IAR
EAS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax)
Single pulse avalanche energy (starting Tj = 25 °C,
ID = IAR, VDD = 50 V)
Electrical ratings
Value
±25
11
8
44
110
40
50
-55 to 150
Unit
V
A
A
W
V/ns
V/ns
°C
Value
1.14
50
Unit
°C/W
Value
Unit
2.5
A
320
mJ
DocID026806 Rev 2
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