STD12N50DM2 Datasheet, PDF (1/16 Pages) STMicroelectronics – Fast-recovery body diode

STD12N50DM2
N-channel 500 V, 0.299 Ω typ., 11 A MDmesh™ DM2
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STD12N50DM2
VDS
500 V
RDS(on) max.
0.350 Ω
ID
11 A
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh DM2 fast recovery diode
series. It offers very low recovery charge and
time (Qrr, trr) combined with low RDS(on),
rendering it suitable for the most demanding high
efficiency converters and ideal for bridge
topologies and ZVS phase-shift converters.
Order code
STD12N50DM2
Table 1: Device summary
Marking
Package
12N50DM2
DPAK
Packing
Tape and reel
March 2016
DocID026806 Rev 2
This is information on a product in full production.
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