STD11NM50N Datasheet, PDF (5/16 Pages) STMicroelectronics – N-channel 500 V, 0.4 Ω, 8.5 A MDmesh™ II Power MOSFET in DPAK, TO-220FP and TO-220

STD11NM50N, STF11NM50N, STP11NM50N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 250 V, I_D = 4.25 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 19)
Min. Typ. Max Unit
8
ns
10
ns
-
-
33
ns
10
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 8.5 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 8.5 A, di/dt = 100 A/µs _-
V_DD = 60 V (see Figure 22)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 8.5 A, di/dt = 100 A/µs
V_DD = 60 V, T_j = 150 °C
-
(see Figure 22)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
8.5 A
34 A
1.5 V
230
ns
2.1
µC
18
A
275
ns
2.5
µC
18
A
Doc ID 17156 Rev 3
5/16