STD11NM50N Datasheet, PDF (1/16 Pages) STMicroelectronics – N-channel 500 V, 0.4 Ω, 8.5 A MDmesh™ II Power MOSFET in DPAK, TO-220FP and TO-220

STD11NM50N
STF11NM50N, STP11NM50N
N-channel 500 V, 0.4 Ω, 8.5 A MDmesh™ II Power MOSFET
in DPAK, TO-220FP and TO-220
Features
Order codes
STD11NM50N
STF11NM50N
STP11NM50N
V_DSS @T_Jmax
R_DS(on)
max
550 V
< 0.47 Ω
I_D
8.5 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
1
DPAK
3
2
1
TO-220FP
3
2
1
TO-220
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STD11NM50N
STF11NM50N
STP11NM50N
Marking
11NM50N
11NM50N
11NM50N
Package
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
November 2010
Doc ID 17156 Rev 3
1/16
www.st.com
16