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STD11NM50N Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 500 V, 0.4 Ω, 8.5 A MDmesh™ II Power MOSFET in DPAK, TO-220FP and TO-220
◁
Electrical characteristics
STD11NM50N, STF11NM50N, STP11NM50N
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
resistance
VGS = 10 V, ID = 4.5 A
Min. Typ. Max. Unit
500
V
1 µA
100 µA
100 nA
2
3
4
V
0.4 0.47 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
547
pF
-
42
- pF
2
pF
Coss
(1)
eq.
Output equivalent
capacitance
VDS = 0 to 400 V, VGS = 0
-
210
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
5.8
-
Ω
Qg
Total gate charge
VDD = 400 V, ID = 8.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 18)
19
nC
-
3.7
- nC
10
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
4/16
Doc ID 17156 Rev 3
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