STD11NM50N Datasheet, PDF (3/16 Pages) STMicroelectronics – N-channel 500 V, 0.4 Ω, 8.5 A MDmesh™ II Power MOSFET in DPAK, TO-220FP and TO-220

STD11NM50N, STF11NM50N, STP11NM50N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
TO-220
Value
DPAK
Unit
TO-220FP
V_DS
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
dv/dt ⁽³⁾
Drain-source voltage (V_GS = 0)
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
500
± 25
8.5
6
34
70
70
15
V_ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
T_stg Storage temperature
T_j Max. operating junction temperature
- 55 to 150
150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 8.5 A, di/dt ≤ 400 A/µs, V_Peak < V_(BR)DSS,V_DD = 80% V_(BR)DSS
8.5 ⁽¹⁾
6 ⁽¹⁾
34⁽¹⁾
25
2500
V
V
A
A
A
W
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-amb Thermal resistance junction-ambient max
R_thj-pcb Thermal resistance junction-pcb max⁽¹⁾
T_l
Maximum lead temperature for soldering
purpose
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Value
TO-220 DPAK
1.79
62.5
50
Unit
TO-220FP
5
°C/W
62.5 °C/W
°C/W
300
300
°C
Table 4. Thermal data
Symbol
Parameter
I_AR Avalanche current, repetetive or not repetetive⁽¹⁾
E_AS Single pulse avalanche energy ⁽²⁾
1. Pulse width limited by T_JMAX.
2. Starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V.
Value
3
150
Unit
A
mJ
Doc ID 17156 Rev 3
3/16