STD110N8F6 Datasheet, PDF (5/16 Pages) STMicroelectronics – Very low gate charge

STD110N8F6
Electrical characteristics
Table 7. Source-drain diode
Symbol
Parameter
Test conditions
V_SD(1) Forward on voltage
I_SD = 80 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 80 A, di/dt = 100 A/µs
V_DD = 64 V (see Figure 15)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
-
1.2 V
- 30
ns
- 34
nC
- 2.3
A
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