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| STD110N8F6 Datasheet, PDF (4/16 Pages) STMicroelectronics – Very low gate charge | |||
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Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On/off-state
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
VGS = 0, ID = 1 mA
IDSS
Zero-gate voltage
drain current
IGSS
Gate-body leakage
current
VGS = 0, VDS = 80 V
VGS = 0, VDS = 80 V,
TC = 125 °C
VDS = 0, VGS = +20 V
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source
on- resistance
VGS = 10 V, ID = 40 A
STD110N8F6
Min. Typ. Max. Unit
80
V
1 µA
100 µA
100 nA
2.5
4.5 V
0.0056 0.0065 â¦
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
VDS = 40 V, f = 1 MHz,
VGS = 0
VDD = 40 V, ID = 80 A,
VGS = 10 V
(see Figure 14)
Min.
-
-
Typ.
9130
320
Max. Unit
- pF
- pF
-
225
- pF
-
150
- nC
-
40
- nC
-
30
- nC
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
VDD = 40 V, ID = 55 A,
RG = 4.7 â¦, VGS = 10 V
(see Figure 13)
Min. Typ. Max. Unit
-
24
-
ns
-
61
-
ns
-
162
-
ns
-
48
-
ns
4/16
DocID027274 Rev 1
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