STD110N8F6 Datasheet, PDF (3/16 Pages) STMicroelectronics – Very low gate charge

STD110N8F6
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
V_DS
Drain-source voltage
V_GS
Gate-source voltage
I_D
Drain current (continuous) at T_C = 25 °C
I_D
I_DM(1)
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
P_TOT
E_AS(2)
Total dissipation at T_C = 25 °C
Single pulse avalanche energy
T_J
Operating junction temperature
T_stg
Storage temperature
1. Pulse width is limited by safe operating area
2. Starting T_J = 25 °C, I_D = 55 A, V_DD = 60 V
80
±20
80
72
320
167
180
-55 to 175
Table 3. Thermal data
Symbol
Parameter
R_thj-case
R_thj-pcb(1)
Thermal resistance junction-case max.
Thermal resistance junction-pcb max.
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Value
0.9
50
Unit
V
V
A
A
A
W
mJ
°C
°C
Unit
°C/W
°C/W
DocID027274 Rev 1
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