STD110N8F6 Datasheet, PDF (1/16 Pages) STMicroelectronics – Very low gate charge

STD110N8F6
N-channel 80 V, 0.0056 Ω typ.,80 A, STripFET™ F6
Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code V_DS R_DS(on)max I_D P_TOT
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STD110N8F6 80 V 0.0065 Ω 80 A 167 W


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Figure 1. Internal schematic diagram
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• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
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Order code
STD110N8F6
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Table 1. Device summary
Marking
Package
110N8F6
DPAK
Packing
Tube
December 2014
This is information on a product in full production.
DocID027274 Rev 1
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