STB8N90K5 Datasheet, PDF (5/15 Pages) STMicroelectronics – Zener-protected

STB8N90K5
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off delay time
tf
Fall time
Table 7: Switching times
Electrical characteristics
Test conditions
Min. Typ. Max. Unit
VDD= 450 V, ID = 4 A,
- 14.7 -
ns
RG = 4.7 Ω, VGS = 10 V
- 13.2 -
ns
(see Figure 14: "Test circuit for
resistive load switching times"
- 36.4 -
ns
and Figure 19: "Switching time
waveform")
- 13.5 -
ns
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
ISD
ISDM⁽¹⁾
VSD⁽²⁾
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, VGS = 0 V
ISD = 8 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
trr
Reverse recovery time
ISD = 8 A, di/dt = 100 A/µs,
Qrr
Reverse recovery charge ^{VDD = 60 V, Tj = 150 °C}
(see Figure 16: "Test circuit for
IRRM Reverse recovery current ^{inductive load switching and}
diode recovery times")
Min. Typ. Max. Unit
-
8
A
-
32 A
-
1.5 V
- 371
ns
- 4.27
µC
- 23
A
- 582
ns
- 5.73
µC
- 19.7
A
Notes:
(1)_{Pulse width limited by safe operating area}
(2)_{Pulsed: pulse duration = 300 µs, duty cycle 1.5%}
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
V (BR)GSO Gate-source breakdown voltage IGS= ± 1mA, ID= 0A
Min Typ. Max Unit
30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection,thus eliminating the need for additional external componentry.
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