STB8N90K5 Datasheet, PDF (1/15 Pages) STMicroelectronics – Zener-protected

STB8N90K5
N-channel 900 V, 0.60 Ω typ., 8 A MDmesh™ K5
Power MOSFET in a D²PAK package
Datasheet - production data
TAB
2
3
1
D²PAK
Figure 1: Internal schematic diagram
Features
Order code
STB8N90K5
VDS
900 V
RDS(on) max.
ID
0.68 Ω
8A
 Industry’s lowest RDS(on) x area
 Industry’s best FoM (figure of merit)
 Ultra-low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STB8N90K5
Table 1: Device summary
Marking
Package
8N90K5
D²PAK
Packing
Tape and reel
November 2016
DocID030104 Rev 1
This is information on a product in full production.
1/15
www.st.com