STB8N90K5 Datasheet, PDF (3/15 Pages) STMicroelectronics – Zener-protected

STB8N90K5
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VGS
ID⁽¹⁾
ID⁽¹⁾
ID⁽²⁾
PTOT
dv/dt ⁽³⁾
dv/dt ⁽⁴⁾
TJ
Tstg
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current pulsed
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Operating junction temperature range
Storage temperature range
Notes:
(1)_{Limited by maximum junction temperature}
(2)_{Pulse width limited by safe operating area}
(3)_{ISD ≤ 8 A, di/dt ≤ 100 A/μs; VDS peak ≤ V(BR)DSS}
(4)_{VDS ≤ 720 V}
Symbol
Rthj-case
Rthj-pcb⁽¹⁾
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
Notes:
(1)_{When mounted on FR-4 board of 1 inch², 2 oz Cu}
Symbol
IAR
EAS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by TJ max)
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Electrical ratings
Value
±30
8
5
32
130
4.5
50
-55 to 150
Unit
V
A
A
A
W
V/ns
°C
Value
0.96
30
Unit
°C/W
°C/W
Value
Unit
2.7
A
250
mJ
DocID030104 Rev 1
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