STB6N60M2 Datasheet, PDF (5/21 Pages) STMicroelectronics – Extremely low gate charge

STB6N60M2, STD6N60M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
-
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 4.5 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
-
I_SD = 4.5 A, di/dt = 100 A/µs _-
V_DD = 60 V (see Figure 17)
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 4.5 A, di/dt = 100 A/µs ^-
V_DD = 60 V, T_j = 150 °C
-
(see Figure 17)
-
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
4.5 A
18 A
1.6 V
274
ns
1.47
µC
10.7
A
376
ns
1.96
µC
10.5
A
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