STB6N60M2 Datasheet, PDF (1/21 Pages) STMicroelectronics – Extremely low gate charge

STB6N60M2,
STD6N60M2
N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2
Power MOSFETs in D²PAK and DPAK packages
Datasheet - production data
TAB
3
1
D² PAK
TAB
3
1
DPAK
Features
Order code
STB6N60M2
STD6N60M2
V_DS @
T_Jmax
650 V
R_DS(on)
max
1.2 Ω
I_D
4.5 A
• Extremely low gate charge
• Excellent output capacitance (C_oss) profile
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
, TAB
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
Order code
STB6N60M2
STD6N60M2
AM15572v1
Table 1. Device summary
Marking
Package
6N60M2
D²PAK
DPAK
Packing
Tape and reel
May 2016
This is information on a product in full production.
DocID024772 Rev 3
1/21
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