STB6N60M2 Datasheet, PDF (3/21 Pages) STMicroelectronics – Extremely low gate charge

STB6N60M2, STD6N60M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
V_GS Gate-source voltage
±25
I_D
Drain current (continuous) at T_C = 25 °C
4.5
I_D
Drain current (continuous) at T_C = 100 °C
2.9
I_DM ⁽¹⁾ Drain current (pulsed)
18
P_TOT Total dissipation at T_C = 25 °C
60
dv/dt ⁽²⁾ Peak diode recovery voltage slope
15
dv/dt ⁽³⁾ MOSFET dv/dt ruggedness
50
T_stg
Storage temperature range
T_j
Operating junction temperature range
1. Pulse width limited by safe operating area
2. I_SD ≤ 4.5 A, di/dt ≤ 400 A/µs; V_{DS peak} < V_(BR)DSS, V_DD=400 V
3. V_DS ≤ 480 V
-55 to 150
Table 3. Thermal data
Symbol
Parameter
Value
D²PAK
DPAK
R_thj-case
R_thj-pcb
Thermal resistance junction-case max
Thermal resistance junction-pcb max⁽¹⁾
1. When mounted on 1 inch² FR-4, 2 Oz copper board
2.08
30
50
Table 4. Avalanche characteristics
Symbol
Parameter
Value
I_AR
Avalanche current, repetitive or not
repetitive (pulse width limited by T_jmax)
1
E_AS
Single pulse avalanche energy (starting
T_j=25°C, I_D= I_AR; V_DD= 50 V)
86
Unit
V
A
A
A
W
V/ns
°C
Unit
°C/W
°C/W
Unit
A
mJ
DocID024772 Rev 3
3/21
21