STB6N60M2 Datasheet, PDF (4/21 Pages) STMicroelectronics – Extremely low gate charge

Electrical characteristics
2
Electrical characteristics
STB6N60M2, STD6N60M2
(T_C = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On /off states
Test conditions
V_(BR)DSS
Drain-source
breakdown voltage
I_D = 1 mA, V_GS = 0
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
V_DS = 600 V
drain current (V_GS = 0) _{VDS = 600 V, TC=125 °C}⁽¹⁾
Gate-body leakage
current (V_DS = 0)
V_GS = ± 25 V
Gate threshold voltage V_DS = V_GS, I_D = 250 µA
Static drain-source
on-resistance
V_GS = 10 V, I_D = 2.25 A
1. Defined by design, not subject to production test
Min. Typ. Max. Unit
600
V
1 µA
100 µA
±10 µA
2
3
4
V
1.06 1.2 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 100 V, f = 1 MHz,
V_GS = 0
-
232
- pF
-
14
- pF
-
0.7
- pF
Coss eq.(1) ^{Equivalent output}
capacitance
V_DS = 0 to 480 V, V_GS = 0
-
71
- pF
R_G
Intrinsic gate
resistance
f = 1 MHz open drain
-
6.5
-
Ω
Q_g Total gate charge
V_DD = 480 V, I_D = 4.5 A,
Q_gs Gate-source charge V_GS = 10 V
Q_gd Gate-drain charge
(see Figure 16)
-
8.2
- nC
-
1.7
- nC
-
4.2
- nC
1. _{Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%}
VDSS
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
Min. Typ. Max. Unit
-
9.5
-
ns
V_DD = 300 V, I_D = 1.65 A,
-
7.4
-
ns
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 15 and Figure 20)
-
24
-
ns
-
22.5
-
ns
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DocID024772 Rev 3