STB50NE10_06 Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 100V - 0.021Ω - 50A - D2PAK STripFET™ Power MOSFET

STB50NE10
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min.
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
V_SD ⁽²⁾ Forward on voltage
I_SD = 50A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD = 50A, di/dt = 100A/µs,
Reverse recovery charge V_DD = 30V, T_j = 150°C
Reverse recovery current (see Figure 14)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ.
155
815
10.5
Max. Unit
50
A
200 A
1.5 V
ns
nC
A
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