STB50NE10_06 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 100V - 0.021Ω - 50A - D2PAK STripFET™ Power MOSFET

Electrical characteristics
2
Electrical characteristics
STB50NE10
(T_CASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
Zero gate voltage
drain current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 250µA, V_GS =0
100
V
V_DS = Max rating
V_DS = Max rating,
T_C = 125°C
1
µA
10
µA
V_GS = ± 20V
±100 nA
V_DS = V_GS, I_D = 250µA
2
3
4
V
V_GS = 10V, I_D = 25A
0.021 0.027 Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS=V_DS>I_D(on)xR_DS(on)
max, ^ID ^{= 20A}
20
V_DS = 25V, f = 1MHz,
V_GS = 0
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD = 50V, I_D = 25A
R_G = 4.7Ω V_GS = 10V
(see Figure 12)
Q_g
Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 80V, I_D = 50A,
V_GS = 10V, R_G = 4.7Ω
(see Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Typ.
35
4350
500
175
25
100
45
35
123
24
47
Max.
6000
166
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
4/13