STB50NE10_06 Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 100V - 0.021Ω - 50A - D2PAK STripFET™ Power MOSFET

STB50NE10
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM(1)
P_tot
Drain-source voltage (V_GS = 0)
Drain-gate voltage (R_GS = 20 kΩ)
Gate- source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating Factor
dv/dt
Peak diode recovery voltage slope
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Pulse width limited by safe operating area.
Value
100
100
± 20
50
35
200
180
1.2
6
-65 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Rthj-sink Thermal resistance case-sink max
T_J
Maximum lead temperature for soldering purpose
0.83
°C/W
62.5
°C/W
0.5
°C/W
300
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AR
(pulse width limited by Tj max)
Single pulse avalanche energy
E_AS
(starting Tj = 25 °C, I_D = I_AR, V_DD = 50 V)
Max value Unit
50
A
300
mJ
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