STB50NE10_06 Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 100V - 0.021Ω - 50A - D2PAK STripFET™ Power MOSFET

STB50NE10
N-channel 100V - 0.021Ω - 50A - D²PAK
STripFET™ Power MOSFET
General features
Type
STB50NE10
V_DSS
100V
R_DS(on)
I_D
<0.027Ω 50A
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Low gate charge at 100 °C
■ Application oriented characterization
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
■ Switching application
3
1
D²PAK
Internal schematic diagram
Order codes
Part number
STB50NE10T4
Marking
B50NE10
Package
D²PAK
Packaging
Tape & reel
June 2006
Rev 5
1/13
www.st.com
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