STB33N60DM2 Datasheet, PDF (5/20 Pages) STMicroelectronics – Extremely high dv/dt ruggedness

STB33N60DM2, STP33N60DM2, STW33N60DM2
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD Source-drain current
-
24 A
ISDM⁽¹⁾ Source-drain current (pulsed)
-
96 A
VSD⁽²⁾ Forward on voltage
VGS = 0 V, ISD = 24 A
-
1.6 V
trr
Reverse recovery time
ISD = 24 A, di/dt = 100 A/µs, - 150
ns
Qrr Reverse recovery charge
VDD = 60 V (see Figure 20:
"Test circuit for inductive
- 0.5
µC
IRRM Reverse recovery current
load switching and diode
recovery times")
- 8.8
A
trr
Reverse recovery time
ISD = 24 A, di/dt = 100 A/µs, - 316
ns
Qrr Reverse recovery charge
VDD = 60 V, Tj = 150 °C
- 2.85
(see Figure 20: "Test circuit
µC
IRRM Reverse recovery current
for inductive load switching
-
18
and diode recovery times")
A
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{Pulse test: pulse duration = 300 µs, duty cycle 1.5%.}
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-
V
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