STB33N60DM2 Datasheet, PDF (3/20 Pages) STMicroelectronics – Extremely high dv/dt ruggedness

STB33N60DM2, STP33N60DM2, STW33N60DM2
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VGS
ID
IDM⁽¹⁾
PTOT
dv/dt⁽²⁾
dv/dt⁽³⁾
Tstg
Tj
Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
Drain current (continuous) at Tcase = 100 °C
Drain current (pulsed)
Total dissipation at Tcase = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature
Operating junction temperature
±25
24
15.5
96
190
50
50
-55 to 150
V
A
A
W
V/ns
°C
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{ISD ≤ 24 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.}
(3) _{VDS ≤ 480 V.}
Symbol
Rthj-case
Rthj-pcb
Rthj-amb
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb⁽¹⁾
Thermal resistance junction-ambient
D²PAK
30
Value
TO-220
0.66
62.5
TO-247
50
Notes:
(1)_{When mounted on 1 inch² FR-4, 2 Oz copper board.}
Unit
°C/W
Table 4: Avalanche characteristics
Symbol
Parameter
IAR Avalanche current, repetitive or not repetitive (Pulse width limited by Tjmax)
EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value Unit
5.5 A
570 mJ
DocID026854 Rev 2
3/20