STB33N60DM2 Datasheet, PDF (4/20 Pages) STMicroelectronics – Extremely high dv/dt ruggedness

Electrical characteristics
STB33N60DM2, STP33N60DM2, STW33N60DM2
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-
resistance
VGS = 0 V, VDS = 600 V
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C
VDS = 0 V, VGS = ±25 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 12 A
Min. Typ. Max. Unit
600
V
1
µA
100
±10 µA
3
4
5
V
0.110 0.130 Ω
Symbol
Ciss
Coss
Crss
Coss eq.⁽¹⁾
RG
Qg
Qgs
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Qgd
Gate-drain charge
Table 6: Dynamic
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0 V
Min. Typ. Max. Unit
- 1870 -
-
87
-
pF
-
2
-
VDD = 480 V, VGS = 0 V
f = 1 MHz, ID= 0 A
VDD = 480 V, ID = 24 A,
VGS = 10 V (see Figure 19:
"Test circuit for gate charge
behavior" and Figure 23:
"Switching time waveform")
- 157 - pF
- 4.5
-
Ω
- 43
-
-
9.8
-
nC
-
21
-
Notes:
(1) _{Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS.
Symbol
Parameter
td(on) Turn-on delay time
tr
Rise time
td(off) Turn-off delay time
tf
Fall time
Table 7: Switching times
Test conditions
VDD = 300 V, ID = 12 A
RG = 4.7 Ω, VGS = 10 V (see
Figure 18: "Test circuit for
resistive load switching
times" and )
Min. Typ. Max. Unit
-
17
-
-
8
-
ns
-
62
-
-
9
-
4/20
DocID026854 Rev 2